2SC5738 2001-12-17 1 toshiba transistor silicon npn epitaxial type 2SC5738 high-speed switching applications dc-dc converter applications high dc current gain: h fe = 400 to 1000 (i c = 0.5 a) low collector-emitter saturation voltage: v ce (sat) = 0.15 v (max) high-speed switching: t f = 90 ns (typ.) maximum ratings (ta 25c) characteristics symbol rating unit collector-base voltage v cbo 40 v collector-emitter voltage v cex 30 v collector-emitter voltage v ceo 20 v emitter-base voltage v ebo 7 v dc i c 3.5 collector current pulse i cp 6.0 a base current i b 350 ma dc 625 collector power dissipation t 10 s p c (note) 1000 mw junction temperature t j 150 c storage temperature range t stg 55 to 150 c note: mounted on fr4 board (glass epoxy, 1.6 mm thick, cu area: 645 mm 2 ) electrical characteristics (ta 25c) characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb 40 v, i e 0 100 na emitter cut-off current i ebo v eb 7 v, i c 0 100 na collector-emitter breakdown voltage v (br) ceo i c 10 ma, i b 0 20 v h fe (1) v ce 2 v, i c 0.5 a 400 1000 dc current gain h fe (2) v ce 2 v, i c 1.6 a 200 collector-emitter saturation voltage v ce (sat) i c 1.6 a, i b 32 ma 0.15 v base-emitter saturation voltage v be (sat) i c 1.6 a, i b 32 ma 1.10 v collector output capacitance c ob v cb 10 v, i e 0, f 1 mhz 18 pf rise time t r 100 storage time t stg 350 switching time fall time t f see figure 1 circuit diagram. v cc 12 v, r l 7.5 i b1 i b2 53 ma 90 ns industrial applications unit: mm jedec D jeita D toshiba 2-3s1a weight: 0.01 g (typ.)
2SC5738 2001-12-17 2 marking w d figure 1 switching time test circuit & timin g chart i b2 i b1 20 s output input i b2 i b1 r l v cc duty cycle 1%
2SC5738 2001-12-17 3 base-emitter voltage v be (v) collector current i c (a) base-emitter saturation voltage v be (sat) (v) collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) collector current i c (a) h fe ? i c dc current gain h fe collector current i c (a) v ce (sat) ? i c collector-emitter saturation voltage v ce (sat) (v) collector current i c (a) v be (sat) ? i c i c ? v be 0 001 0.01 0.1 1 10 1000 100 10 25 ta 100c 55 common emitter v ce 2 v single nonrepetitive pulse 0 001 1 0.1 0.01 0 001 0.01 0.1 1 10 common emitter i c / b 50 single nonrepetitive pulse 25c 55c ta 100c 0 001 0.01 0.1 1 10 0.1 1 10 common emitter i c /i b 50 single nonrepetitive pulse ta 100c 25 55 0 0 6 5 4 3 2 1 0.2 0.4 0.6 1 1 2 0.8 common emitter v ce 2 v single nonrepetitive pulse ta 100c 55 25 0 0 common emitter ta 25c single nonrepetitive pulse 6 5 4 3 2 1 0.1 60 50 40 30 20 10 5 i b 2 ma 0.2 0.3 0 5 0.4
2SC5738 2001-12-17 4 collector-emitter voltage v ce (v) collector current i c (a) transient thermal resistance r h ? t w pulse width t w (s) transient thermal resistance r th (c/w) curves should be applied in thermal limited area. single nonrepetitive pulse ta 25c mounted on fr4 board (glass epoxy, 1.6 mm thick, cu area: 645 mm 2 ) 1000 1 0 001 100 10 0.01 0.1 1 10 100 1000 safe operating area 10 0.01 0.1 1 10 100 0.1 1 i c max (pulsed) i c max (continuous) dc operation * (ta 25c) 10 s v ceo max : single nonrepetitive pulse ta 25c note that the curves for 100 ms *, 10 s * and dc operation * will be different when the devices aren?t mounted on an fr4 board (glass epoxy, 1 6 mm thick, cu area: 645 mm 2 ). these characteristic curves must be derated linearly with increase in temperature. 100 s 1 ms 10 ms 100 ms * 10 s *
2SC5738 2001-12-17 5 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
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